Characterization of Degradation under Standard Environmental Testing Methods for Crystalline Silicon Photovoltaic Modules
نویسندگان
چکیده
Standard environmental tests have been developed for photovoltaic (PV) modules to assess the reliability of their performance in a short period of time. These tests generate different modes of degradation by combination of environmental stresses. There is a need to differentiate between the standard tests on the basis of severity. This helps to understand the individual and combined degradation effect occurred due to temperature and humidity stress, which is the focus of the present study. In this work, standard tests viz. humidity freeze (HF), thermal cycling (TC) and damp heat test (DH) have been performed on different batches of multi-crystalline silicon PV modules. One batch of modules was subjected to combined tests wherein the three tests were performed in succession and the other batch was separately subjected to the individual tests. Spatial characterization techniques i.e. electroluminescence (EL) and dark lock-in-thermography (DLIT) imaging were used in tandem with illuminated current voltage (I-V) analysis for detection and quantification of degradation under the standard tests. The information obtained from the comparison between the different tests, on a scale of time and severity can be helpful for preliminary investigations performed on effects of the common environmental degradation factors like high temperature, high humidity and thermal ramping. The presented findings can further aid research and development on different aspects of reliability testing on PV module performance under environmental effects.
منابع مشابه
Comparison of Reliability Tests by Characterization of Degradation in Photovoltaic Modules
The recent large scale deployment of multi crystalline silicon photovoltaic (PV) modules in the field has risen the need for indepth studies of degradation in a fast and efficient manner. In this context, different standard test procedures as specified under IEC 61215 viz. thermal cycling (TC), humidity freeze (HF) and damp heat (DH) have been developed for crystalline silicon PV modules [1]. T...
متن کاملIn-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing: Preprint
We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity-freeze stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. We analyze dark I-V curves measured on modules undergoing degradation in three steps; first for shunting and recombination losses; seco...
متن کاملDegradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint
The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules— tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules—were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakag...
متن کاملCharacterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat
Because it is considered economically favorable to build arrays with high system voltage by serially connecting photovoltaic (PV) modules, it is necessary to explore the potential long-term degradation mechanisms that the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85°C/85% relative humidity (RH) and 45°C...
متن کاملTemperature-dependency analysis and correction methods of in situ power-loss estimation for crystalline silicon modules undergoing potential-induced degradation stress testing
We propose a method for in situ characterization of the photovoltaic module power at standard test conditions, using superposition of the dark current–voltage (I–V) curve measured at the elevated stress temperature, during potential-induced degradation (PID) testing. PID chamber studies were performed on several crystalline silicon module designs to determine the extent to which the temperature...
متن کامل